The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions.
This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 O typical, which is matched to within 2 O between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.
- 1 pC charge injection
- ±2.7 V to ±5.5 V dual-supply operation
- +2.7 V to +5.5 V single-supply operation
- Automotive temperature range: -40°C to +125°C
- 100 pA maximum at 25°C leakage currents
- 85 O on resistance
- Rail-to-rail switching operation
- Fast switching times
- 16-lead TSSOP and SOIC packages
- Typical power consumption: <0.1 µW
- TTL-/CMOS-compatible inputs